High-k and ALD/CVD Metal Precursor Market Analysis 2024: Key Technologies and Innovations

Over the recent years, advanced semiconductors industry has created an influential impact on high-k and ALD/CVD metal precursor market dynamics. The multitudinous demand for thin film materials in advanced semiconductor devices is expected to stimulate the industry share. By undergoing the two processes- chemical vapor deposition(CVD) and atomic layer deposition (ALD), high-quality precursors are produced which are further used in the production of thin films. Rigorous ongoing research for the development of high-performance sophisticated precursors, as well as government investments in nanotechnology research, is anticipated to create lucrative opportunities for the market in the years ahead. The Market worth over USD 220 million in 2015, is slated to exceed USD 950 million by the end of next seven years, with a staggering CAGR projection of 17.8% over the period of 2016-2024.”

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The advent of advanced device shrinking technologies such as ALD and CVD has enabled manufacturers to design thin films with high aspect ratios. A large number of manufacturers are replacing poly-Si with platinum as a potential electrode and substituting commonly used SiO2 with dielectric materials like hafnium and silicon compounds. Metal-organic compounds will continue to gain recognition as a metal precursor on account of low thermal stability.

High-k gates technology segment was valued at more than US$33 million in 2015 and is projected to witness a CAGR of around 23% through 2024. The product demand will be largely influenced by the need for accurate and timely translation of large amounts of data used across various industries.

Electronics manufacturers have been making substantial research and development efforts in recent years, which has allowed them to build high-purity advanced metal precursors that can help meet different process requirements. The fabrication of semiconductors faster, cost-effectively, and seamlessly requires a more complex 3D structure, which is likely to augment demand for high-k layer and vapor deposition technology in the coming years.

The industry requires collaborations across the entire value chain both in terms of new molecules and hardware to deliver chemicals into the equipment more efficiently. Future trends in chemical designs will witness growing role of intellectual property rights protection measures.

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In terms of the regional landscape, U.S. high-k and ALD/CVD metal precursor market size was valued at US$30 million in 2015 and is expected to witness steady growth in the forthcoming years. Expansion of the regional microelectronics and nanotechnology, due to complexities in semiconductor manufacturing and transition to 450mm wafers processing technology will complement the regional outlook.

Meanwhile, China, which accounted for more than 35% of the high-k and ALD/CVD metal precursor market share in terms of revenue in 2015, will record substantial gains in the future. The region is experiencing growing demand for sophisticated electronics products. Taiwan has one of the largest consumer bases for semiconductor materials in the Asia Pacific due to the presence of numerous major chipmakers who are bound to witness lucrative opportunities over the next few years.

Mergers and acquisitions along with competitive pricing remain the major business strategies adopted by the key market players. Some of the prominent participants operating in. high-k and ALD/CVD metal precursor market include Dow Chemical, Air Liquide, UP Chemical, and Adeka.

Major Key Points from Table of Content:

Chapter 4         High-k and ALD/CVD Metal Precursor Market, Technology Insights

4.1         High-k and ALD/CVD metal precursor market share by technology, 2015 & 2024

4.2         Interconnect

4.2.1   Market estimates by region, 2013 - 2024

4.3         Memory/Capacitor

4.3.1   Market estimates by region, 2013 - 2024

4.4         Gates

4.4.1   Market estimates by region, 2013 - 2024

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